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[КНИГА][B] GaAs and related materials: bulk semiconducting and superlattice properties
S Adachi - 1994 - World Scientific
The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …
high-speed electronics and optoelectronic devices, because the lattice parameter difference …
Progress in the room-temperature optical functions of semiconductors
AB Djurišić, Y Chan, EH Li - Materials Science and Engineering: R: Reports, 2002 - Elsevier
Optical functions of a specific semiconductor in a particular wavelength region are often
needed in optics and optoelectronics research. Basic optical properties of some materials …
needed in optics and optoelectronics research. Basic optical properties of some materials …
Data analysis for spectroscopic ellipsometry
GE Jellison - Handbook of Ellipsometry, 2005 - Springer
Spectroscopic ellipsometry (SE) is a very powerful tool for characterization of thin film
systems. Under appropriate circumstances, SE determines film thicknesses more accurately …
systems. Under appropriate circumstances, SE determines film thicknesses more accurately …
Modeling the optical dielectric function of semiconductors: extension of the critical-point parabolic-band approximation
CC Kim, JW Garland, H Abad, PM Raccah - Physical Review B, 1992 - APS
A model is proposed for the line shape of the optical dielectric function of zinc-blende
semiconductors. For comparison with previously proposed models, this model is used …
semiconductors. For comparison with previously proposed models, this model is used …
Overview of variable-angle spectroscopic ellipsometry (VASE): II. Advanced applications
B Johs, JA Woollam, CM Herzinger… - Optical metrology: a …, 1999 - spiedigitallibrary.org
A preceding companion paper provides a general introduction to Variable Angle
Spectroscopic Ellipsometry (VASE), and also describes many typical applications of the …
Spectroscopic Ellipsometry (VASE), and also describes many typical applications of the …
Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi's model
AD Rakić, ML Majewski - Journal of applied physics, 1996 - pubs.aip.org
Optical dielectric function model of Ozaki and Adachi [J. Appl. Phys. 78, 3380 (1995)] is
augmented by introducing Gaussian‐like broadening function instead of Lorentzian …
augmented by introducing Gaussian‐like broadening function instead of Lorentzian …
Sha** the radiation pattern of second-harmonic generation from AlGaAs dielectric nanoantennas
We study the manipulation of the radiation pattern of second-harmonic generation from
AlGaAs all-dielectric nanoantennas exhibiting electric and magnetic resonances. We show …
AlGaAs all-dielectric nanoantennas exhibiting electric and magnetic resonances. We show …
Multifunctional integrated photonics in the mid-infrared with suspended AlGaAs on silicon
The microscale integration of mid-and long-wave-infrared photonics could enable the
development of fieldable, robust chemical sensors, as well as highly efficient infrared …
development of fieldable, robust chemical sensors, as well as highly efficient infrared …
Modeling the optical dielectric function of the alloy system As
CC Kim, JW Garland, PM Raccah - Physical Review B, 1993 - APS
In a previous paper, the authors proposed a model for the optical dielectric function of zinc-
blende semiconductors. It was found to be more generally valid than previous models. In this …
blende semiconductors. It was found to be more generally valid than previous models. In this …
Optical functions from 0.02 to 6 eV of epitaxial layers
R Ferrini, M Patrini, S Franchi - Journal of applied physics, 1998 - pubs.aip.org
The complex refractive index ñ= n+ ik and the dielectric function ε̃= ε 1+ iε 2 at room
temperature of Al x Ga 1− x Sb films with 0⩽ x⩽ 0.5, grown by molecular beam epitaxy on a …
temperature of Al x Ga 1− x Sb films with 0⩽ x⩽ 0.5, grown by molecular beam epitaxy on a …