The fundamentals and applications of ferroelectric HfO2
Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …
have attracted much interest from the ferroelectric materials and devices community …
From ferroelectric material optimization to neuromorphic devices
Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …
achieved polarization state, ferroelectric materials have a unique potential for low power …
Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Novel hafnium oxide (HfO2)‐based ferroelectrics reveal full scalability and complementary
metal oxide semiconductor integratability compared to perovskite‐based ferroelectrics that …
metal oxide semiconductor integratability compared to perovskite‐based ferroelectrics that …
Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film
Atomic-resolution Cs-corrected scanning transmission electron microscopy revealed local
shifting of two oxygen positions (OI and OII) within the unit cells of a ferroelectric (Hf0. 5Zr0 …
shifting of two oxygen positions (OI and OII) within the unit cells of a ferroelectric (Hf0. 5Zr0 …
Review and perspective on ferroelectric HfO2-based thin films for memory applications
The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted
increasing interest since 2011. They have various advantages such as Si-based …
increasing interest since 2011. They have various advantages such as Si-based …
Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …
their dimensional scalability and incompatibility with complementary metal‐oxide …
Intrinsic ferroelectricity in Y-doped HfO2 thin films
Ferroelectric HfO2-based materials hold great potential for the widespread integration of
ferroelectricity into modern electronics due to their compatibility with existing Si technology …
ferroelectricity into modern electronics due to their compatibility with existing Si technology …
Ferroelectric transistors for memory and neuromorphic device applications
Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …
memory devices in the past decades, owing to their nonvolatile polarization characteristics …
High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation
Ferroelectric tunnel junctions use a thin ferroelectric layer as a tunnelling barrier, the height
of which can be modified by switching its ferroelectric polarization. The junctions can offer …
of which can be modified by switching its ferroelectric polarization. The junctions can offer …