Yellow–red emission from (Ga, In) N heterostructures
Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …
to a lesser extent green. Extending their spectral range to longer wavelengths while …
High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation
InGaN red light emitting diode (LED) is one of the crucial bottlenecks that must be broken
through to realize high‐resolution full‐color mini/micro‐LED displays. The efficiency of …
through to realize high‐resolution full‐color mini/micro‐LED displays. The efficiency of …
Full InGaN red light emitting diodes
A Dussaigne, F Barbier, B Damilano… - Journal of Applied …, 2020 - pubs.aip.org
The full InGaN structure is used to achieve red light emitting diodes (LEDs). This LED
structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec …
structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec …
Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate
A Even, G Laval, O Ledoux, P Ferret, D Sotta… - Applied Physics …, 2017 - pubs.aip.org
The impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full InGaN
heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with …
heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with …
Imaging nonradiative point defects buried in quantum wells using cathodoluminescence
Crystallographic point defects (PDs) can dramatically decrease the efficiency of
optoelectronic semiconductor devices, many of which are based on quantum well (QW) …
optoelectronic semiconductor devices, many of which are based on quantum well (QW) …
Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy
We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD)
superlattices grown via plasma-assisted molecular-beam epitaxy, as compared to their …
superlattices grown via plasma-assisted molecular-beam epitaxy, as compared to their …
Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption
C Du, Z Ma, J Zhou, T Lu, Y Jiang, P Zuo, H Jia… - Applied Physics …, 2014 - pubs.aip.org
We studied the effect of multiple interruptions during the quantum well growth on emission-
efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane …
efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane …
Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice
A Dussaigne, F Barbier, B Samuel, A Even… - Journal of Crystal …, 2020 - Elsevier
The InGaN pseudo-substrate, namely InGaNOS (InGaN On Sapphire), is used to enhance
the In incorporation rate in In y Ga 1-y N/In x Ga 1-x N multiple quantum wells (MQWs) to get …
the In incorporation rate in In y Ga 1-y N/In x Ga 1-x N multiple quantum wells (MQWs) to get …
Origins of nanoscale emission inhomogeneities of high content red emitting InGaN/InGaN quantum wells
B Samuel, D Cooper, N Rochat, A Mavel… - Journal of Applied …, 2021 - pubs.aip.org
The origin of the nanoscale emission inhomogeneities of red emitting InGaN/InGaN
quantum wells (QWs) grown directly on a GaN template and on an InGaN on sapphire …
quantum wells (QWs) grown directly on a GaN template and on an InGaN on sapphire …
Observation and control of the surface kinetics of InGaN for the elimination of phase separation
The growth of InGaN alloys via Metal-Modulated Epitaxy has been investigated. Transient
reflection high-energy electron diffraction intensities for several modulation schemes during …
reflection high-energy electron diffraction intensities for several modulation schemes during …