A novel cylindrical surrounding gate MOSFETs with electrically induced source/drain
extension is proposed and demonstrated by numerical simulation for the first time. In the …

In this paper a novel graphene nanoribbon transistor with electrically induced junction for
source and drain regions is proposed. An auxiliary junction is used to form electrically …

In this paper, we present the unique features exhibited by a proposed structure of coaxially
gated carbon nanotube field-effect transistor (CNTFET) with doped source and drain …

Physics-based analytical threshold voltage model for cylindrical surrounding-gate MOSFET
with electrically induced source/drain extensions is presented. The effect of inversion …

The efficient deposition of high frequency microwave energy into the top several microns of
a semiconducting material was experimentally demonstrated as a highly effective …

The high electron mobility in heterostructure devices stems from fact that electrons are
injected into intrinsic layer of a semiconductor material and are confined into two …

The tendency to have better control of the flow of electrons in a channel of field-effect
transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field …

In the era of sub-micron devices, superior ultra-thin gate-oxide characteristics are required.
This paper presents a novel process to improve the electrical characteristics and the …

Many new applications of plasma immersion ion implantation (PIII) have recently emerged.
In addition to the surface modification and fabrication of conventional metallurgical and …

This paper presents a novel process to improve the electrical characteristics and the
reliability in submicron (< 0.1 μm) Metal Oxide Semiconductor Fleld Effect Transistors …