Silicon does not emit light efficiently, therefore the integration of other light‐emitting
materials is highly demanded for silicon photonic integrated circuits. A number of integration …

In the paper, we review our work on heterogeneous III-V-on-silicon photonic components
and circuits for applications in optical communication and sensing. We elaborate on the …

Optical frequency combs emerge as a promising technology that enables highly sensitive,
near-real-time spectroscopy with a high resolution. The currently available comb generators …

We experimentally and theoretically investigate the pulsed emission dynamics of a three
section tapered semiconductor quantum dot laser. The laser output is characterized in terms …

An anti-colliding pulse-type III–V-on-silicon passively mode-locked laser is presented for the
first time based on a III–V-on-silicon distributed Bragg reflector as outcoupling mirror …

By using colliding-pulse mode-locking (CPM) configuration with asymmetric cladding layer
and coating, 1.5-µm AlGaInAs/InP multiple quantum well (MQW) CPM lasers with high …

We experimentally study the pulse generation and the pulse train timing and amplitude
stability of a monolithic passively mode-locked multisection quantum-well semiconductor …

We show experimentally and theoretically that localized pulses can be generated from an
electrically biased 200 μm multitransverse-mode vertical-cavity surface-emitting laser. The …

We present the first integrated linear extended-cavity passively mode-locked (PML)
semiconductor laser in which the operating mode can be switched electrically between two …

We experimentally demonstrate anti-colliding pulse mode-locking (ACPML) in an integrated
semiconductor laser. The device geometry consists of a gain section and a saturable …