This review highlights the most significant advances of the nanofabrication techniques
reported over the past decade with a particular focus on the approaches tailored towards the …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

Recently, with scaling down of semiconductor devices, need for nanotechnology has
increased enormously. For nanoscale devices especially, each of the layers should be as …

This review highlights the development of energy saving transparent heat regulating (THR)
materials and coating for energy saving window applications. Current state-of-the-art …

The reduction and removal of surface oxides from GaAs substrates by atomic layer
deposition (ALD) of Al 2 O 3 and Hf O 2 are studied using in situ monochromatic x-ray …

Efficient and reliable on-chip optical amplifiers and light sources would enable versatile
integration of various active functionalities on the silicon platform. Although lasing on silicon …

In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …

Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …

The prospect of enhanced device performance from III–V materials has been recognized for
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …