Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Deep neural networks are efficient at learning from large sets of labelled data, but struggle to
adapt to previously unseen data. In pursuit of generalized artificial intelligence, one …

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the
potential for in-memory computing (IMC) over other nonvolatile memories (NVMs). Content …

Ternary content addressable memories (TCAMs) represent a form of logic-in-memory and
are currently widely used in routers, caches, and efficient machine learning models. From a …

Data transfer between a processor and memory frequently represents a bottleneck with
respect to improving application-level performance. Computing in memory (CiM), where …

Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being
explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most …

Recent years have witnessed a rapid growth in the domain of Internet of Things (IoT). This
network of billions of devices generates and exchanges huge amount of data. The limited …

In this paper, we consider devices, circuits, and systems comprised of transistors with
integrated ferroelectrics. Said structures are actively being considered by various …

High static power associated with static random access memory (SRAM) represents a
bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile …