Topological Hall effect (THE) and its inverse effect (skyrmion Hall effect) generally occurs in
magnetic materials with topological properties, as a consequence of nonuniform and …

Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

To avoid the epitaxy dilemma in various thin films, such as complex oxide, silicon, organic,
metal/alloy, etc., their stacking at an atomic level and secondary growth are highly desired to …

Spin‐orbit coupling refers to the relativistic interaction between the spin and orbital motions
of electrons. This interaction leads to numerous intriguing phenomena, including spin‐orbit …

Ferroionic materials combine ferroelectric properties and spontaneous polarization with
ionic phenomena of fast charge recombination and electrodic functionalities. In this paper …

Voltage control of magnetism has been considered and proven to be an efficient actuation
protocol to boost energy efficiency in a widespread range of spintronic devices. In particular …