Atomically thin molybdenum disulfide (MoS2), a member of the transition metal
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …

The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has
enabled continuous enhancement of their performance during the last four decades …

Abstract Platinum diselenide (PtSe2) field‐effect transistors with ultrathin channel regions
exhibit p‐type electrical conductivity that is sensitive to temperature and environmental …

Two-dimensional (2D) transition-metal dichalcogenides have attracted significant attention
as gas-sensing materials owing to their superior responsivity at room temperature and their …

This study reports the optoelectronic characterization of few‐layer ReSe2field effect
transistors at different pressures. The output curves reveal dominant n‐type behavior and a …

Abstract 2D layered materials with their tunable bandgap and unique crystal structures are
excellent candidates for 2D optoelectronic memories. In this work, we present a simple …

Few‐layer palladium diselenide (PdSe2) field effect transistors are studied under external
stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The …

We report the first observation of a gate-controlled field emission current from a tungsten
diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si …

The metal-graphene contact resistance is one of the major limiting factors toward the
technological exploitation of graphene in electronic devices and sensors. High contact …

Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …