Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
Hot electrons and the associated ballistic and quasiballistic transport, heretofore neglected
endemically, across the active regions of InGaN light emitting diodes (LEDs) have been …
endemically, across the active regions of InGaN light emitting diodes (LEDs) have been …
Raman scattering by the E2h and A1 (LO) phonons of InxGa1− xN epilayers (0.25< x< 0.75) grown by molecular beam epitaxy
We use Raman scattering to investigate the composition behavior of the E 2h and A 1 (LO)
phonons of In x Ga 1− x N and to evaluate the role of lateral compositional fluctuations and …
phonons of In x Ga 1− x N and to evaluate the role of lateral compositional fluctuations and …
Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN
The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined
from temperature-dependent Hall effect measurements and also from Infrared (IR) …
from temperature-dependent Hall effect measurements and also from Infrared (IR) …
High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1− xN
O Donmez, M Gunes, F Sonmez, S Ardali, G Atmaca, SB Lisesivdin… - Materials Science in …, 2021 - Elsevier
Abstract The Raman and classical Hall effect measurements have been used to determine
the longitudinal optical phonon energy, effective mass, and optical phonon relaxation times …
the longitudinal optical phonon energy, effective mass, and optical phonon relaxation times …
High-efficiency InGaN/GaN light-emitting diodes with electron injector
The efficiency in non-polar m-plane InGaN/GaN light-emitting diodes (LEDs) with an
electron injector (EI) layer was investigated using multiband effective mass theory. The …
electron injector (EI) layer was investigated using multiband effective mass theory. The …
Theoretical investigation on electron mobility in AlInGaN/InGaN heterostructures
Y Li - physica status solidi (b), 2019 - Wiley Online Library
The dependences of electron mobility in AlInGaN/InGaN heterostructure on the barrier and
channel alloy compositions and on temperature are investigated including six scattering …
channel alloy compositions and on temperature are investigated including six scattering …
Nonpolar and semipolar GaN, optical gain and efficiency
Crystal orientation effects on electronic and optical properties of wurtzite (WZ) InGaN/GaN
quantum wells (QWs) with piezoelectric (PZ) and spontaneous (SP) polarizations are …
quantum wells (QWs) with piezoelectric (PZ) and spontaneous (SP) polarizations are …