A 24–29.5-GHz highly linear phased-array transceiver front-end in 65-nm CMOS supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G new radio

Y Yi, D Zhao, J Zhang, P Gu, Y Chai… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a four-element phased-array transceiver (TRX) front-end for millimeter-
wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM–PM) and …

A broadband linear ultra-compact mm-wave power amplifier with distributed-balun output network: Analysis and design

F Wang, H Wang - IEEE Journal of Solid-State Circuits, 2021 - ieeexplore.ieee.org
This article presents a broadband power amplifier (PA) with a distributed-balun output
network that provides the PA optimum load impedance over a wide bandwidth. The …

Review of Ka-Band power amplifier

Z Wang, S Hu, L Gu, L Lin - Electronics, 2022 - mdpi.com
With the increase in the demand for high-speed transmission communication, satellite
communication is develo** rapidly. Because of the bandwidth capacity, the K/Ka band is …

A 20-GHz 1.9-mW LNA Using gm-Boost and Current-Reuse Techniques in 65-nm CMOS for Satellite Communications

J Zhang, D Zhao, X You - IEEE Journal of Solid-State Circuits, 2020 - ieeexplore.ieee.org
A 20-GHz low-power low-noise amplifier (LNA) in 65-nm CMOS is presented. The LNA is
cascaded with a single-ended gm-boosted common-gate (CG) stage and a differential …

A CMOS 76–81-GHz 2-TX 3-RX FMCW radar transceiver based on mixed-mode PLL chirp generator

T Ma, W Deng, Z Chen, J Wu, W Zheng… - IEEE Journal of Solid …, 2019 - ieeexplore.ieee.org
A fully integrated 76-81-GHz frequency-modulated, continuous-wave (FMCW) radar
transceiver (TRX) in a 65-nm CMOS is presented. Two transmitters (TXs) and three receivers …

A high-efficiency 142–182-GHz SiGe BiCMOS power amplifier with broadband slotline-based power combining technique

X Li, W Chen, S Li, Y Wang, F Huang… - IEEE Journal of Solid …, 2021 - ieeexplore.ieee.org
In this article, a high-efficiency broadband millimeter-wave (mm-Wave) integrated power
amplifier (PA) with a low-loss slotline-based power combing technique is proposed. The …

A 24–30-GHz TRX front-end with high linearity and load-variation insensitivity for mm-wave 5G in 0.13-μm SiGe BiCMOS

Z Li, J Chen, D Hou, H Li, L Wang… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end in
0.13-SiGe BiCMOS for fifth generation (5G) is presented. The front-end is composed of a …

A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS

J Yu, J Chen, P Zhou, H Li, Z Wang, Z Li… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a broadband sub-terahertz (THz) power amplifier (PA) with a low-loss
four-way power combiner. The proposed power combiner consists of an improved zero …

Millimeter-wave frequency reconfigurable dual-band CMOS power amplifier for 5G communication radios

J Lee, JS Paek, S Hong - IEEE Transactions on Microwave …, 2021 - ieeexplore.ieee.org
This article presents two millimeter-wave frequency reconfigurable dual-band CMOS power
amplifiers (PAs) for fifth-generation (5G) communications comprising a single-stage dual …

A millimeter-wave four-way Doherty power amplifier with over-GHz modulation bandwidth

X Zhang, H Guo, T Chi - IEEE Journal of Solid-State Circuits, 2024 - ieeexplore.ieee.org
This article presents the design and analysis of a millimeter-wave (mmWave) four-way
Doherty power amplifier (PA), aiming to enhance the PA energy efficiency when amplifying …