Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …

The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111)
silicon substrate using SiO 2 grid mask pattern. Within window regions of (0.2–0.5) mm×(0.2 …

Adopting anisotropy etching method, a (111) facet of Si is obtained on a Si substrate and
selective area growth (SAG) of GaN is performed with metal-organic vapor phase epitaxy on …

We have grown and characterized GaN/Si (111) epitaxial layers having different total
thicknesses and periods of Al0. 3Ga0. 7N/GaN superlattices using metalorganic chemical …

Uniform growth of (1-101) GaN was performed on coalesced stripes of GaN which had been
prepared by selective metalorganic vapor phase epitaxy on a 7° off-axis (001) Si substrate …

We describe an ongoing study of nanoheteroepitaxy (NHE), the use of nanoscale growth-
initiation areas for the integration of highly mismatched semiconductor materials. The …

A {20-21} GaN layer was grown from a c-plane-like sapphire sidewall of a {22-43} patterned
sapphire substrate according to the epitaxial relationship between c-GaN and c-sapphire …

Selective area growth and epitaxial lateral overgrowth (ELOG) of semipolar (1 1¯
1\left(\right.\macr\left.\right) 01) GaN stripes are demonstrated on a trench patterned vicinal …

The mechanical responses of GaN/AlN multilayers grown on Si (111) substrates by using
the metalorganic vapor phase epitaxy (MOVPE) were investigated by combining the …

The direct growth of m-plane GaN via metal–organic vapor phase epitaxy has been
demonstrated using a deep-groove-patterned a-plane sapphire substrate with a c-plane …