A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

As the dimensions of the transistor, the key element of silicon technology, are approaching
their physical limits, develo** semiconductor technology with novel concepts and …

Low-power electronic devices play a pivotal role in the burgeoning artificial intelligence era.
The study of such devices encompasses low-subthreshold swing (SS) transistors and …

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating
electronic energy band structures, rich valley physical properties and strong spin–orbit …

Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to
be a very feasible solution for future data storage and neuromorphic computing …

Abstract The Fermi-Dirac distribution of carriers and the drift-diffusion mode of transport
represent two fundamental barriers towards the reduction of the subthreshold slope (SS) …

Ferroelectric negative capacitance transistors (Fe‐NCFETs) have emerged as a promising
technology for low‐power electronics and have the potential to continue Moore's law …

The functional reconfiguration of transistors and memory in homogenous ferroelectric
devices offers significant opportunities for implementing the concepts of in‐memory …

For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …

The Boltzmann Tyranny, set by thermionic statistics, dictates the lower limit of switching
slope (SS) of a MOSFET to be 60 mV/dec, the fundamental barrier for low-dissipative …