A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …

Surface states and their influence on the Fermi level at the surface of GaN and AlN are
studied using x-ray photoelectron spectroscopy (XPS). The effect of polarity on surface …

We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that
have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating …

In this work, we investigate the effect of different chemical treatments, such as solvents,
bases, and acids, on the surface properties and electrical behavior of Schottky diodes …

The surface band bending of Ga-face n-type GaN is clarified via angle-resolved X-ray
photoelectron spectroscopy (ARXPS) of test samples with and without hydrofluoric acid (HF) …

Epitaxial (111) MgO films were prepared on (0001) Al x Ga 1− x N via molecular-beam
epitaxy for x= 0 to x= 0.67. Valence band offsets of MgO to Al x Ga 1− x N were measured …

GaN surface and near-surface chemistry influence on band offsets of oxide overlayers is
demonstrated through X-ray photoelectron spectroscopy measurements using epitaxial …

The surface polarization of Ga-face gallium nitride (GaN)(2 nm)/AlGaN (22 nm)/GaN channel
(150 nm)/buffer/Si with Al 2 O 3 cap** layer is investigated by angle-resolved X-ray …

GaN devices offer exciting competition to incumbent technologies for high-power electronic
devices. The wide bandgap of GaN enables it to achieve higher breakdown voltages and …

The electronic properties of GaN make it a desirable candidate for microwave and power
semiconductor devices. The wide bandgap provides a high breakdown electric field which …