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Overview of electroceramic materials for oxide semiconductor thin film transistors
The flat panel display (FPD) market has been experiencing a rapid transition from liquid
crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the …
crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the …
Trap density probing on top-gate MoS 2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy
Two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) have
been extensively studied, but most of the FETs with gate insulators have displayed negative …
been extensively studied, but most of the FETs with gate insulators have displayed negative …
Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination
X Huang, C Wu, H Lu, F Ren, Q Xu, H Ou… - Applied Physics …, 2012 - pubs.aip.org
The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-
gallium-zinc oxide (a-IGZO) thin film transistor (TFT) are studied under monochromatic light …
gallium-zinc oxide (a-IGZO) thin film transistor (TFT) are studied under monochromatic light …
Flexible and stable solution-processed organic field-effect transistors
Highly stable, solution-processed, small molecule-polymer blend organic field-effect
transistors (OFETs) with a top-gate geometry were demonstrated on a flexible …
transistors (OFETs) with a top-gate geometry were demonstrated on a flexible …
Self-Assembled TaOX/2H-TaS2 as a van der Waals Platform of a Multilevel Memristor Circuit Integrated with a β-Ga2O3 Transistor
Two-dimensional (2D)-layered material tantalum disulfide (2H-TaS2) is known to be a van
der Waals conductor at room temperature. Here, 2D-layered TaS2 has been partially …
der Waals conductor at room temperature. Here, 2D-layered TaS2 has been partially …
Sb-doped p-ZnO quantum dots: templates for ZnO nanorods homojunction white light-emitting diodes by low-temperature solution process
Zinc oxide (ZnO) is an attractive metal oxide material in optoelectronics because of its visible
light-emitting property caused by various deep-level defects. To exploit this property to its full …
light-emitting property caused by various deep-level defects. To exploit this property to its full …
The effects of valence band offset on threshold voltage shift in a-InGaZnO TFTs under negative bias illumination stress
H Kim, K Im, J Park, T Khim, H Hwang… - IEEE Electron …, 2020 - ieeexplore.ieee.org
In this paper, we propose a novel mechanism for the Vth shift of amorphous-indium gallium
zinc oxide (a-IGZO) thin film transistors under negative bias illumination stress (NBIS). Three …
zinc oxide (a-IGZO) thin film transistors under negative bias illumination stress (NBIS). Three …
Investigation of the Effect of the Passivation on the Charge Transfer from MAPbI3 to Electron Transport Layer Using a Heterodyne Transient Grating Spectroscopic …
SH Jeong, SH Choi, YH Kim, WY Sohn - ChemPhysChem, 2024 - Wiley Online Library
We fabricated MAPbI3 perovskite thin films with ZnO on a glass substrate, in which a
passivation layer (Phenethylammonium iodide (PEAI); p‐methoxyphenethylammonium …
passivation layer (Phenethylammonium iodide (PEAI); p‐methoxyphenethylammonium …
Tuning the hysteresis voltage in 2D multilayer MoS2 FETs
J Jiang, Z Zheng, J Guo - Physica B: Condensed Matter, 2016 - Elsevier
The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum
disulfide (MoS 2) field-effect transistors (FETs) can be practically used in the next-generation …
disulfide (MoS 2) field-effect transistors (FETs) can be practically used in the next-generation …
Accurate defect density-of-state extraction based on back-channel surface potential measurement for solution-processed metal-oxide thin-film transistors
H Im, H Song, J Park, Y Hong, J Ha… - … on Electron Devices, 2017 - ieeexplore.ieee.org
We report more accurate extraction method of the defect density of states for solution-
processed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Since the solution …
processed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Since the solution …