Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above fmax/2in Sub-THz/THz Frequencies
This article presents a single-stage single-ended (SE) and a multistage pseudo-differential
cascode low-noise amplifiers (D-LNA) with their center frequencies at 235 and 290 GHz …
cascode low-noise amplifiers (D-LNA) with their center frequencies at 235 and 290 GHz …
A SiGe HBT -Band LNA With Butterworth Response and Noise Reduction Technique
This letter presents a wideband high-gain fourstage cascode D-band low noise amplifier
(LNA) implemented in a 0.13-μm SiGe BiCMOS technology. A shunt inductor that is used at …
(LNA) implemented in a 0.13-μm SiGe BiCMOS technology. A shunt inductor that is used at …
3.2-mW ultra-low-power 173–207-GHz amplifier with 130-nm SiGe HBTs operating in saturation
This article presents an ultra-low-power silicon germanium heterojunction bipolar transistor
(SiGe HBT) amplifier operating at 200 GHz. The amplifier consists of three cascaded gain …
(SiGe HBT) amplifier operating at 200 GHz. The amplifier consists of three cascaded gain …
4.2 An E-band high-linearity antenna-LNA front-end with 4.8 dB NF and 2.2 dBm IIP3 exploiting multi-feed on-antenna noise-canceling and gm-boosting
In this paper, we explore the antenna-electronics co-design concept on RX topologies to
enhance key RX performance at high mm-wave frequencies, such as NF and linearity. For …
enhance key RX performance at high mm-wave frequencies, such as NF and linearity. For …
A 140–220-GHz low-noise amplifier with 6-dB minimum noise figure and 80-GHz bandwidth in 130-nm SiGe BiCMOS
This letter presents an ultra-broadband low-noise amplifier (LNA) with a 3-dB bandwidth of
80 GHz, covering the entire WR5 frequency band (140–220 GHz). Broadband gain and …
80 GHz, covering the entire WR5 frequency band (140–220 GHz). Broadband gain and …
Multi-Feed Antenna and Electronics Co-Design: An E-Band Antenna-LNA Front End With On-Antenna Noise-Canceling and Gₘ-Boosting
This article presents an E-band low-noise amplifier (LNA) co-designed and co-integrated
with an on-chip multifeed antenna for antenna-level LNA noise-canceling and gm-boosting …
with an on-chip multifeed antenna for antenna-level LNA noise-canceling and gm-boosting …
Analysis and design of D-band cascode SiGe BiCMOS amplifiers with gain-bandwidth product enhanced by load reflection
Emerging applications in D-band (110–170GHz) demand amplifiers with high gain-
bandwidth (GBW) products. In this frequency range, the cascode stage offers superior …
bandwidth (GBW) products. In this frequency range, the cascode stage offers superior …
A 230-GHz SiGe amplifier with 21.8-dB gain and 3-dBm output power for sub-THz receivers
H Li, J Chen, D Hou, Z Li, P Zhou… - IEEE Microwave and …, 2021 - ieeexplore.ieee.org
This letter presents a 230-GHz high-gain amplifier implemented in a 0.13-μm SiGe BiCMOS
technology. The amplifier consists of a single-ended cascode (CC) stage for noise …
technology. The amplifier consists of a single-ended cascode (CC) stage for noise …
A 125–143-GHz frequency-reconfigurable BiCMOS compact LNA using a single RF-MEMS switch
J Heredia, M Ribó, L Pradell, ST Wipf… - IEEE Microwave and …, 2019 - ieeexplore.ieee.org
In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier
(LNA) is presented for the first time. It consists of two cascode stages and was fabricated …
(LNA) is presented for the first time. It consists of two cascode stages and was fabricated …
A Differential D-Band Low-Noise Amplifier in 0.13 μm SiGe
This letter presents a differential two-stage cascode-band low-noise amplifier (LNA) using
IHP's SiGe BiCMOS technology. Both gain-peaking and noise-reduction techniques are …
IHP's SiGe BiCMOS technology. Both gain-peaking and noise-reduction techniques are …