[BUKU][B] Basic semiconductor physics
C Hamaguchi, C Hamaguchi - 2010 - Springer
The purpose of this book was to provide a detailed understanding of the basic
semiconductor physics such as properties of electronic, optical, transport, and quantum …
semiconductor physics such as properties of electronic, optical, transport, and quantum …
Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
We present parameter-free calculations of electronic properties of InGaN, InAlN, and AlGaN
alloys. The calculations are based on a generalized quasichemical approach, to account for …
alloys. The calculations are based on a generalized quasichemical approach, to account for …
[HTML][HTML] Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures
The piezoelectric and spontaneous polarization of wurtzite Sc x Al 1− x N, Ga x Al 1− x N,
and In x Al 1− x N ternary compounds dramatically affects the electrical properties of …
and In x Al 1− x N ternary compounds dramatically affects the electrical properties of …
Composition dependence of photoluminescence of GaAs1− xBix alloys
Room temperature photoluminescence (PL) spectra have been measured for GaAs 1− x Bi x
alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy …
alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy …
Zinc gallate (ZnGa2O4) epitaxial thin films: determination of optical properties and bandgap estimation using spectroscopic ellipsometry
Electronic grade ZnGa_2O_4 epitaxial thin films were grown on c-plane sapphire substrates
by metal-organic chemical vapor deposition and investigated using spectroscopic …
by metal-organic chemical vapor deposition and investigated using spectroscopic …
Bandgap and optical absorption edge of GaAs1− xBix alloys with 0< x< 17.8%
M Masnadi-Shirazi, RB Lewis… - Journal of Applied …, 2014 - pubs.aip.org
The compositional dependence of the fundamental bandgap of pseudomorphic GaAs 1− x
Bi x layers on GaAs substrates is studied at room temperature by optical transmission and …
Bi x layers on GaAs substrates is studied at room temperature by optical transmission and …
Composition-dependent band gap and band-edge bowing in AlInN: A combined theoretical and experimental study
A combined experimental and theoretical study of the band gap of AlInN is presented, which
confirms the breakdown of the virtual crystal approximation (VCA) for the conduction and …
confirms the breakdown of the virtual crystal approximation (VCA) for the conduction and …
Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
E Sakalauskas, H Behmenburg, C Hums… - Journal of Physics D …, 2010 - iopscience.iop.org
A detailed discussion of the optical properties of Al-rich Al 1− x In x N alloy films is
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
Optical properties of InGaN thin films in the entire composition range
SA Kazazis, E Papadomanolaki… - Journal of Applied …, 2018 - pubs.aip.org
The optical properties of thick InGaN epilayers, with compositions spanning the entire
ternary range, are studied in detail. High structural quality, single phase InxGa1-xN (0001) …
ternary range, are studied in detail. High structural quality, single phase InxGa1-xN (0001) …
Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges
III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga,
Al) N-based photonic and electronic devices. The bandgaps and bandgap bowing …
Al) N-based photonic and electronic devices. The bandgaps and bandgap bowing …