Local probe techniques for luminescence studies of low-dimensional semiconductor structures
With the rapid development of technologies for the fabrication of, as well as applications of
low-dimensional structures, the demands on characterization techniques increase. Spatial …
low-dimensional structures, the demands on characterization techniques increase. Spatial …
Pathways to exotic metastable silicon allotropes
Our economy consistently pushes for the development of increasingly complex materials to
meet the demands of high-efficiency energy conversion and high-performance engineering …
meet the demands of high-efficiency energy conversion and high-performance engineering …
Light emission from silicon
The possibility induction of light emission from silicon, an indirect bandgap material in which
radiative transitions are unlikely, raises several interesting and technologically important …
radiative transitions are unlikely, raises several interesting and technologically important …
Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure<? format?> from Indirect-Gap Si and Ge Semiconductors
Combining two indirect-gap materials—with different electronic and optical gaps—to create
a direct gap material represents an ongoing theoretical challenge with potentially rewarding …
a direct gap material represents an ongoing theoretical challenge with potentially rewarding …
Sorting stable versus unstable hypothetical compounds: the case of multi‐functional ABX half‐heusler filled tetrahedral structures
Electronic structure theory has recently been used to propose hypothetical compounds in
presumed crystal structures, seeking new useful functional materials. In some cases, such …
presumed crystal structures, seeking new useful functional materials. In some cases, such …
Full-band-structure calculation of second-harmonic generation in odd-period strained (Si/(Ge superlattices
We report a full-band-structure calculation of frequency-dependent second-harmonic
generation in odd-period strained [(Si) n/(Ge) n]/Si (001) superlattices for n= 1, 3, and 5. We …
generation in odd-period strained [(Si) n/(Ge) n]/Si (001) superlattices for n= 1, 3, and 5. We …
[SÁCH][B] Atomic and electronic structure of surfaces: theoretical foundations
M Lannoo, P Friedel - 2013 - books.google.com
Surfaces and interfaces play an increasingly important role in today's solid state devices. In
this book the reader is introduced, in a didactic manner, to the essential theoretical aspects …
this book the reader is introduced, in a didactic manner, to the essential theoretical aspects …
Unified approach to the electronic structure of strained Si/Ge superlattices
C Tserbak, HM Polatoglou, G Theodorou - Physical Review B, 1993 - APS
A tight-binding model in the three-center representation, with an orthogonal sp 3 set of
orbitals and interactions up to third neighbor, is introduced. This model gives a good …
orbitals and interactions up to third neighbor, is introduced. This model gives a good …
Photoluminescence in short-period Si/Ge strained-layer superlattices
Photoluminescence has been observed in the energy range 0.7 to 0.9 eV in short-period
Si/Ge strained-layer superlattices grown on Si (100) and Ge (100) substrates. The …
Si/Ge strained-layer superlattices grown on Si (100) and Ge (100) substrates. The …
Two-dimensional Penta-BP5 Sheets: High-stability, Strain-tunable Electronic Structure and Excellent Mechanical Properties
S Liu, B Liu, X Shi, J Lv, S Niu, M Yao, Q Li, R Liu… - Scientific reports, 2017 - nature.com
Abstract Two-dimensional (2D) crystals exhibit unique and exceptional properties and show
promise for various applications. In this work, we systematically studied the structures of a …
promise for various applications. In this work, we systematically studied the structures of a …