Local probe techniques for luminescence studies of low-dimensional semiconductor structures

A Gustafsson, ME Pistol, L Montelius… - Journal of Applied …, 1998 - pubs.aip.org
With the rapid development of technologies for the fabrication of, as well as applications of
low-dimensional structures, the demands on characterization techniques increase. Spatial …

Pathways to exotic metastable silicon allotropes

B Haberl, TA Strobel, JE Bradby - Applied Physics Reviews, 2016 - pubs.aip.org
Our economy consistently pushes for the development of increasingly complex materials to
meet the demands of high-efficiency energy conversion and high-performance engineering …

Light emission from silicon

SS Iyer, YH **e - Science, 1993 - science.org
The possibility induction of light emission from silicon, an indirect bandgap material in which
radiative transitions are unlikely, raises several interesting and technologically important …

Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure<? format?> from Indirect-Gap Si and Ge Semiconductors

M d'Avezac, JW Luo, T Chanier, A Zunger - Physical review letters, 2012 - APS
Combining two indirect-gap materials—with different electronic and optical gaps—to create
a direct gap material represents an ongoing theoretical challenge with potentially rewarding …

Sorting stable versus unstable hypothetical compounds: the case of multi‐functional ABX half‐heusler filled tetrahedral structures

X Zhang, L Yu, A Zakutayev… - Advanced Functional …, 2012 - Wiley Online Library
Electronic structure theory has recently been used to propose hypothetical compounds in
presumed crystal structures, seeking new useful functional materials. In some cases, such …

Full-band-structure calculation of second-harmonic generation in odd-period strained (Si/(Ge superlattices

E Ghahramani, DJ Moss, JE Sipe - Physical Review B, 1991 - APS
We report a full-band-structure calculation of frequency-dependent second-harmonic
generation in odd-period strained [(Si) n/(Ge) n]/Si (001) superlattices for n= 1, 3, and 5. We …

[SÁCH][B] Atomic and electronic structure of surfaces: theoretical foundations

M Lannoo, P Friedel - 2013 - books.google.com
Surfaces and interfaces play an increasingly important role in today's solid state devices. In
this book the reader is introduced, in a didactic manner, to the essential theoretical aspects …

Unified approach to the electronic structure of strained Si/Ge superlattices

C Tserbak, HM Polatoglou, G Theodorou - Physical Review B, 1993 - APS
A tight-binding model in the three-center representation, with an orthogonal sp 3 set of
orbitals and interactions up to third neighbor, is introduced. This model gives a good …

Photoluminescence in short-period Si/Ge strained-layer superlattices

R Zachai, K Eberl, G Abstreiter, E Kasper, H Kibbel - Physical review letters, 1990 - APS
Photoluminescence has been observed in the energy range 0.7 to 0.9 eV in short-period
Si/Ge strained-layer superlattices grown on Si (100) and Ge (100) substrates. The …

Two-dimensional Penta-BP5 Sheets: High-stability, Strain-tunable Electronic Structure and Excellent Mechanical Properties

S Liu, B Liu, X Shi, J Lv, S Niu, M Yao, Q Li, R Liu… - Scientific reports, 2017 - nature.com
Abstract Two-dimensional (2D) crystals exhibit unique and exceptional properties and show
promise for various applications. In this work, we systematically studied the structures of a …