This paper presents a brief review of scanning-gate microscopy applied to the imaging of
electron transport in buried semiconductor quantum structures. After an introduction to the …

We present evidence for a counterintuitive behavior of semiconductor mesoscopic networks
that is the analog of the Braess paradox encountered in classical networks. A numerical …

In this work, the changes in the energy of electrons and holes, oscillator strength and
interband transition time when external fields are applied to a GaAs/AlGaAs semiconductor …

Combining scanning gate microscopy (SGM) experiments and simulations, we demonstrate
low temperature imaging of the electron probability density| Ψ| 2 (x, y) in embedded …

In the quantum Hall regime, near integer filling factors, electrons should only be transmitted
through spatially separated edge states. However, in mesoscopic systems, electronic …

Studies of electronic interferometers, based on edge-channel transport in the quantum Hall
effect regime, have been stimulated by the search for evidence of abelian and non-abelian …

When coherent charge carriers cross micron-scale cavities, their dynamics can be governed
by a few resonant states, also called “quantum scars”, determined by the cavity geometry …

A systematic theory of the conductance measurements of noninvasive (weak probe)
scanning gate microscopy is presented that provides an interpretation of what precisely is …

The time evolution of a wave packet injected into a semiconductor quantum ring is
investigated in order to obtain the transmission and reflection probabilities. Within the …

The relation between macroscopic charge transport properties and microscopic carrier
distribution is one of the central issues in the physics and future applications of graphene …