The high leakage current has been one of the critical issues in SRAM-based Field
Programmable Gate Arrays (FPGAs). In recent works, resistive non-volatile memories …

Due to its infinite OFF resistance, Nano-Electro-Mechanical Switches (NEMS) have been
recently proposed to reduce leakage current during the standby mode in large-scale Digital …

Static power consumes a significant portion of the available power budget. Consequently,
leakage current reduction techniques such as power gating have become necessary …

In this dissertation, I present techniques for improving the power, performance, and area of
integrated circuits (ICs) through 3-D integration of two emerging nanotechnologies:(1) …

In this article, we demonstrate a double-clamped nano-electromechanical switch (NEMS)
with low stand-by power as an effective solution to the leakage issues in scaled CMOS …

The emergence of the Internet of Things (IoT) has brought energy efficiency and functionality
to the forefront of challenges for future integrated circuits (chips). This necessitates …

This paper presents an 8-Kbit low-power SRAM for high-temperature (up to 300° C)
applications. For reliable low-voltage operation, we employed a decoupled 8T SRAM cell …

This research presents a novel approach for physical design implementation aimed for a
System on Chip (SoC) based on Selective State Retention techniques. Leakage current has …

We designed a one-mask process for all-molybdenum-based laterally actuated
nanoelectromechanical switches. The damascene-like process is designed to ensure a …

The high leakage power due to process nodes scaling down has been one of the critical
issues in CMOS circuits, especially the sleep power critical systems. The conventional …