The past decade has seen rapid progress in research into high-performance Ge-on-Si
photodetectors. Owing to their excellent optoelectronic properties, which include high …

High speed photodetectors are a key building block, which allow a large wavelength range
of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3 …

Silicon photonics research can be dated back to the 1980s. However, the previous decade
has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology …

Serving as the electrical to optical converter, the on-chip silicon light source is an
indispensable component of silicon photonic technologies and has long been pursued …

The presence of a direct band gap and high carrier mobility in few-layer black phosphorus
(BP) offers opportunities for using this material for infrared (IR) light detection. However, the …

We present a micrometer-scale, on-chip integrated, plasmonic enhanced graphene
photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is …

We analyze the optical gain of tensile-strained, n-type Ge material for Si-compatible laser
applications. The band structure of unstrained Ge exhibits indirect conduction band valleys …

We present a compact 1.3× 4 μm^ 2 Germanium waveguide photodiode, integrated in a
CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB …

We report on evanescently coupled Ge waveguide photodetectors that are grown on top of
Si rib waveguides. A Ge waveguide detector with a width of 7.4 μm and length of 50 μm …

High‐performance photodetectors operating over a broad wavelength range from ultraviolet,
visible, to infrared are of scientific and technological importance for a wide range of …