In this work, the effect of electrical conductivity type of the silicon target used to prepare
silicon nitride thin films on glass substrates by dc reactive sputtering technique was studied …

In this work, silicon nitride thin films were prepared by dc reactive sputtering technique using
silicon targets with different types of electrical conductivity (ntype and p-type) and Ar: N2 gas …

Silicon nitride nanostructures were prepared by reactive sputtering technique using silicon
targets with different types of electrical conductivity (n-type and p-type) and Ar: N2 gas …

In this work, the Langmuir characteristics of dc glow discharge plasma employing dual-
magnetron assembly were studied. The plasma was generated by electric discharge of …

In this work, silicon nitride nanostructures were synthesized by dc reactive magnetron
sputtering technique. The effect of deposition time on the structural characteristics …

In this work, silicon nitride nanostructures were synthesized by dc reactive magnetron
sputtering technique. The effect of deposition time on the structural characteristics …

In this work, the breakdown and Langmuir characteristics of dc glow discharge plasma
employing dual-magnetron assembly were studied. The electrical characteristics of this …

In this work, pulsed-laser deposition was used to prepare zinc oxide (ZnO) thin films on
glass and porous silicon substrates. These films were doped with different contents of …