In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …

This paper surveys circuit innovations in ferroelectric memories at three circuit levels:
memory cell, sensing and architecture. A ferroelectric memory cell consists of at least one …

This paper mainly focuses on the development of the NOR flash memory technology, with
the aim of describing both the basic functionality of the memory cell used so far and the main …

The electronics and information technology revolution continues, but it is a critical time in the
development of technology. Once again, we stand on the brink of a new era where emerging …

We review the state-of-the-art in the understanding of planar NAND Flash memory reliability
and discuss how the recent move to three-dimensional (3D) devices has affected this field …

In recent years, there have been major advances in integrated circuit technology which have
both made feasible and generated great interest in electronic circuits which employ more …

Multilevel molecular memory devices were proposed and demonstrated for nonvolatile data
storage up to three bits (eight levels) per cell, in contrast to the standard one-bit-per-cell (two …

A valuable reference for the most vital microelectronic components in the marketplace
DRAMs are the technology drivers of high volume semiconductor fabrication processes for …

Error control coding (ECC) is essential for correcting soft errors in Flash memories. In this
paper we propose use of product code based schemes to support higher error correction …

This paper describes the electrical characteristics of the metal nanocrystal memory devices
continued from the previous paper [see ibid., vol. 49, p. 1606-13, Sept. 2002]. Devices with …