The heterogeneous integration of III–V devices with Si-CMOS on a common Si platform has
shown great promise in the new generations of electrical and optical systems for novel …

The highest solar cell conversion efficiencies are achieved with four-junction devices under
concentrated sunlight illumination. Different cell architectures are under development, all …

Wafer bonding techniques, which are very different from epitaxial growth techniques, can be
used not only for the fabrication of micro-electromechanical systems (MEMS), silicon on …

GaInP/GaAs//Si solar cells with three active pn junctions were fabricated by surface activated
direct wafer bonding between GaAs and Si. The direct wafer bond is performed at room …

Tandem or multijunction solar cells are able to convert sunlight to electricity with greater
efficiency than single junction solar cells by splitting the solar spectrum across sub-cells with …

This chapter discusses solar cells made of III–V semiconductors, and how they have
reached efficiencies of over 46% in 2016, the highest of any photovoltaic technology to date …

This report provides a snapshot of emerging photovoltaic (PV) technologies. It consists of
concise contributions from experts in a wide range of fields including silicon, thin film, III-V …

A detailed study on the application of Pd nanoparticle arrays, produced by self-assembled
block copolymer templates, in bonding of III–V-based solar cell materials was carried out …

The electrical properties of p-GaAs/n+-Si, p+-Si/n-GaAs, p+-GaAs/n+-Si, p+-Si/n+-GaAs, n+-
Si/n+-GaAs, and p+-Si/p+-GaAs junctions fabricated by surface-activated bonding (SAB) …

Direct bonding of a diamond (100) substrate and a Si wafer was achieved at 250° C under
atmospheric conditions. Prior to the bonding process, the diamond substrate was treated …