III-nitrides are intriguing materials with the potential to be used in various interdisciplinary
applications, including high-power optoelectronics, energy conversion, green technologies …

Transition-metal-dichalcogenides-based near-infrared photodetectors have attracted
significant attention because of their applicability in various sectors, such as consumer …

Lead-based halide perovskites have been widely used as efficient energy materials due to
their superior optoelectronic properties and mixed electronic–ionic conductivity. However …

Achieving an ultra-broad spectral response in a self-bias detector is a formidable challenge
that persists in optoelectronics that necessitates innovative solutions. We propose a unique …

Layered tin selenides have gained tremendous interest due to their distinct tunable
semiconducting properties, narrow band gap, low cost, and feasibility for large-scale …

Recently, wide bandgap compound semiconductor materials have attracted much research
interest owing to their great application potential. As most emerging oxide semiconductors …

The exponential growth of large data and the widespread adoption of the Internet of Things
(IoT) have created significant challenges for traditional Von Neumann computers. These …

The AlInN film with a band gap of 2.96 eV is prepared on glass by radio frequency
magnetron sputtering. Photoluminescence spectra reveals that the emission band is …

This study explores the performance of molybdenum diselenide (MoSe 2) based
photodetectors for wearable technology, point-of-care diagnostics, and environmental …

The performance of relevant detectors may be limited by the high dark current, low noise
equivalent power, and photo-response. Graphene is a promising choice for low light …