Negative Magnetoresistivity in Highly Doped n-Type GaN
L Konczewicz, M Iwinska, E Litwin-Staszewska… - Materials, 2022 - mdpi.com
This paper presents low-temperature measurements of magnetoresistivity in heavily doped
n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal …
n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal …
Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges
A two-dimensional electron gas (2DEG), which has recently been shown to develop in the
central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous …
central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous …
Spin transport in polarization induced two dimensional confinement of carriers in wedge shaped\textit {c}-GaN nanowalls
Spin transport property of polarization induced two-dimensional electron gas channel
formed in the central vertical plane of a wedge-shaped\textit {c}-oriented GaN nanowall is …
formed in the central vertical plane of a wedge-shaped\textit {c}-oriented GaN nanowall is …