This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …

The technical progress of Ga 2 O 3 power diodes is now stuck at a critical point where a lack
of performance evaluation and reliability validation at the system-level applications seriously …

Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

Ultrawide-bandgap gallium oxide (Ga 2 O 3) devices have recently emerged as promising
candidates for power electronics; however, the low thermal conductivity (k T) of Ga 2 O 3 …

As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-
cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7 …

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …

In this article, using experimental data, we demonstrate that the technology computer-aided
design (TCAD) is a very cost-effective tool to generate the data to build machine learning …

The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga
2 O 3 power and RF devices. Despite many simulation studies, there is no experimental …