The pervasiveness of information technologies is generating an impressive amount of data,
which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads …

This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

With the upcoming trend of Big Data era, some new types of memory technologies have
emerged as substitutes for the traditional Si-based semiconductor memory devices, which …

With the rapid development of data‐driven human interaction, advanced data‐storage
technologies with lower power consumption, larger storage capacity, faster switching speed …

Ultrathin two-dimensional (2D) nanomaterials, such as graphene and MoS2, hold great
promise for electronics and optoelectronics due to their distinctive physical and electronic …

Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …

Conjugated poly-ynes and poly (metalla-ynes) constitute an important class of new materials
with potential application in various domains of science. The key factors responsible for the …

The unique properties of hybrid heterostructures have motivated the integration of two or
more different types of nanomaterials into a single optoelectronic device structure. Despite …

Memristors with enormous storage capacity and superior processing efficiency are of critical
importance to overcome the Moore's Law limitation and von Neumann bottleneck problems …

With the explosion of data in the information universe and the approaching of fundamental
limits in silicon-based flash memories, the exploration of new device architectures and …