Porous insulators are utilized in the wiring structure of microelectronic devices as a means of
reducing, through low dielectric permittivity, power consumption and signal delay in …

The intrinsic mechanical properties of a given material strongly depend upon its chemical
nature: the organics tend to be soft, but tough, while the inorganic materials are hard but …

Methods are provided that enable the ability to use a less aggressive liner processes, while
producing structures known to give a desired high stress migration and electro-migration …

When the dielectric constant of an insulator in an interconnect is reduced, mechanical
properties are often compromised, giving rise to significant challenges in interconnect …

Via resistance reduction in Cu interconnects was achieved through a pre-liner dielectric
nitridation process prior to pure Ta liner deposition. Replacing TaN with Ta in the …

The thermal resistances of thirty-nine different back end of line (BEOL) test sites consisting of
four line levels and three via levels in SiCOH were measured. The measured unit resistance …

A high performance 45nm BEOL technology with proven reliability is presented. This BEOL
has a hierarchical architecture with up to 10 wiring levels with 5 in PECVD SiCOH (k= 3.0) …

Carbon-doped oxide SiCOH films with low to ultralow dielectric constants were prepared on
a Si substrate by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of …

In this paper the influence of liner deposition parameters on the reliability of 65nm copper
metallizations have been investigated for two different deposition sequences. The use of …

Stress migration lifetime is characterized for a CoWP-only cap process (ie, no dielectric cap)
and a CoWP+ SiN cap process. For the CoWP-only process, the stress migration lifetime …