A nonvolatile memory device including: a first semiconductor layer including word lines, bit
lines, first and second upper substrates adjacent to each other and a memory cell array …

A semiconductor memory device according to an embodiment comprises a plurality of
control gate electrodes, a first semiconductor layer, and a gate insulating layer. The plurality …

(57) ABSTRACT A nonvolatile memory device including: a first semiconduc tor layer
comprising a plurality of first word lines extending in a first direction, a first upper substrate …

A nonvolatile memory device including: a first semiconduc tor layer including word lines, bit
lines, first and second upper substrates adjacent to each other and a memory cell array …

A method of manufacturing a semiconductor device includes forming a stacked structure
with first material layers and second material layers that are stacked alternately with each …

A semiconductor device includes a peripheral circuit region on a lower substrate, and
including circuit elements, memory cell regions including memory cells on each of a first …

(57) ABSTRACT A nonvolatile memory device including: a first semiconduc tor layer
including word lines, bit lines, first and second upper substrates adjacent to each other and …

A vertical memory device is provided. The vertical memory device includes gate electrodes
formed on a substrate and spaced apart from each other in a first direction substantially …

According to one embodiment, a semiconductor memory device includes: a substrate; a first
conductive layer arranged above the substrate; a stacked body arranged on the first …