A double-pulse technique for the dynamic I/V characterization of GaN FETs
Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle
excitation waveforms provide suboptimal I/V curves when used along with GaN field effect …
excitation waveforms provide suboptimal I/V curves when used along with GaN field effect …
This paper presents a novel empirical model for gallium nitride on silicon carbide high-
electron mobility transistors. A global state-space formulation describes charge trap** …
electron mobility transistors. A global state-space formulation describes charge trap** …
Determining drain current characteristics and channel temperature rise in GaN HEMTs
Y Zhang, S Feng, H Zhu, X Gong… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
We experimentally investigated how self-heating affected the transient response of drain
current in AlGaN/GaN high-electron-mobility transistors. Since drain current depends on …
current in AlGaN/GaN high-electron-mobility transistors. Since drain current depends on …
Scalable non-linear electrical model for industrial GaN HEMT technologies up to 50 GHz
G Callet, S Fahkfahk, C Chang… - 2022 IEEE Topical …, 2022 - ieeexplore.ieee.org
The downsizing of the gate length in Gallium Nitride (GaN) process allows targeting higher
frequency applications and simultaneously improve general performances of MMIC circuits …
frequency applications and simultaneously improve general performances of MMIC circuits …
Pulsed IV and RF characterization and modeling of AIGaN HEMTs and Graphene FETs
P Nakkala - 2015 - theses.hal.science
The aim of this work is to assess the potentialities of Graphene Field Effect Transistors (G-
FET) as well as to put in evidence dispersive effects of AlGaN/GaN High Electron Mobility …
FET) as well as to put in evidence dispersive effects of AlGaN/GaN High Electron Mobility …
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements
Guaranteeing charge conservation of empirically extracted Gallium Nitride (GaN) High-
Electron-Mobility Transistor (HEMT) models is necessary to avoid simulation issues and …
Electron-Mobility Transistor (HEMT) models is necessary to avoid simulation issues and …
Narrow-pulse-width double-pulsed S-parameters measurements of 100-nm GaN-on-Si HEMTs
GaN HEMT dispersive phenomena due to charge trap** can be effectively characterized
by means of pulsed IV measurements. In this work, we exploit the wideband feature of the …
by means of pulsed IV measurements. In this work, we exploit the wideband feature of the …
Pulsed techniques for the characterization of low-frequency dispersive effects in RF power FETs using a flexible measurement set-up
This work describes an on-wafer measurement architecture tailored to the broadband
pulsed characterization of radio-frequency (RF) power field-effect transistors (FETs). Based …
pulsed characterization of radio-frequency (RF) power field-effect transistors (FETs). Based …