Physics of thin-film ferroelectric oxides

M Dawber, KM Rabe, JF Scott - Reviews of modern physics, 2005 - APS
This review covers important advances in recent years in the physics of thin-film ferroelectric
oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film …

Conduction through 71° Domain Walls in Thin Films

S Farokhipoor, B Noheda - Physical Review Letters, 2011 - APS
Local conduction at domains and domain walls is investigated in BiFeO 3 thin films
containing mostly 71° domain walls. Measurements at room temperature reveal conduction …

Polarization fatigue in ferroelectric thin films and related materials

XJ Lou - Journal of Applied Physics, 2009 - pubs.aip.org
The experimental characteristics of polarization fatigue in thin-film, bulk ceramic, and single-
crystalline ferroelectrics have been reviewed in detail. Various scenarios and models …

Barrier height at interfaces studied by photoemission

R Schafranek, S Payan, M Maglione, A Klein - Physical Review B—Condensed …, 2008 - APS
The interface formation of Nb-doped SrTiO 3 single crystals and (Ba, Sr) TiO 3 thin films with
Pt has been studied by using photoelectron spectroscopy with in situ sample preparation …

Study of the effect of La3+ do** on the properties of ceramics based on BaTiOx

MV Zdorovets, AL Kozlovskiy - Vacuum, 2019 - Elsevier
The paper presents results of the influence of do** with lanthanum (La 3+) on structural,
conductive properties and phase composition of ceramics based on barium titanate …

Deep yellow emission and high energy device applications of copper doped orthorhombic zirconium titanate nanoparticles

S Akshay, YS Vidya, HC Manjunatha… - Materials Today …, 2023 - Elsevier
For the first time, Zirconium titanate doped with copper (1–9 mol%) was synthesized by an
aloe vera-mediated combustion route followed by calcination at 700 o C. The high …

Magnetocapacitance effect in nonmultiferroic YFeO3 single crystal

ZX Cheng, H Shen, JY Xu, P Liu, SJ Zhang… - Journal of Applied …, 2012 - pubs.aip.org
YFeO 3 single crystal displays two relaxor-like dielectric relaxations, one at low temperature
(170− 300 K) and one at high temperature (370− 520 K), which are attributed to the …

[HTML][HTML] Lanthanum gadolinium oxide: A new electronic device material for CMOS logic and memory devices

SP Pavunny, JF Scott, RS Katiyar - Materials, 2014 - mdpi.com
A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our
laboratory as a novel high-k dielectric material for logic and memory device applications in …

Evolution of the surface structures on SrTiO(110) tuned by Ti or Sr concentration

Z Wang, F Yang, Z Zhang, Y Tang, J Feng, K Wu… - Physical Review B …, 2011 - APS
The surface structure of the SrTiO 3 (110) polar surface is studied by scanning tunneling
microscopy and x-ray photoelectron spectroscopy. Monophased reconstructions in (5× …

Stability of photovoltage and trap of light-induced charges in ferroelectric WO3-doped (Pb0. 97La0. 03)(Zr0. 52Ti0. 48) O3 thin films

M Qin, K Yao, YC Liang, BK Gan - Applied Physics Letters, 2007 - pubs.aip.org
The stability of photovoltage in WO 3-doped (Pb 0.97 La 0.03)(Zr 0.52 Ti 0.48) O 3 (PLWZT)
ferroelectric thin films was investigated. For in-plane polarized configuration, with a greatly …