Energy Level Engineering in In x Ga1–x As/GaAs Quantum Dots Applicable to Quantum Dot-Lasers by Changing the Stoichiometric Percentage
MA Borji, E Rajaei - Journal of Nanoelectronics and …, 2016 - ingentaconnect.com
Band edge and energy levels of truncated pyramidal In x Ga1–x As/GaAs (001) quantum
dots are studied by single-band effective mass approach, and the dependence to …
dots are studied by single-band effective mass approach, and the dependence to …
The influence of gain compression factor on dynamical properties of single level InAs/GaAs quantum dot lasers
M Qorbani, E Rajaei, O Hajizadeh, MA Borji - arxiv preprint arxiv …, 2016 - arxiv.org
In this paper, by representing a single level rate equation model for InAs/GaAs quantum dot
lasers and computations by fourth order Runge-Kutta method some characteristics of the …
lasers and computations by fourth order Runge-Kutta method some characteristics of the …
The Influence of Gain Compression Factor on Dynamical Properties of Single Level InAs/GaAs Quantum Dot Lasers
M Qorbani, E Rajaei, O Hajizadeh, MA Borji - Iranian Journal of Science …, 2018 - Springer
In this paper, by representing a single level rate equation model for InAs/GaAs quantum dot
lasers and computations by fourth-order Runge–Kutta method some characteristics of the …
lasers and computations by fourth-order Runge–Kutta method some characteristics of the …