State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
A pathway to thin GaAs virtual substrate on on‐axis Si (001) with ultralow threading dislocation density
With recent developments in high‐speed and high‐power electronics and Si‐based
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …
Scaling challenges for advanced CMOS devices
The economic health of the semiconductor industry requires substantial scaling of chip
power, performance, and area with every new technology node that is ramped into …
power, performance, and area with every new technology node that is ramped into …
Atomic structure, stability, and dissociation of dislocations in cadmium telluride
Dislocation plays a crucial role in many material properties of semiconductors, ranging from
plastic deformation to electronic transport. But the dislocation structures and reactions …
plastic deformation to electronic transport. But the dislocation structures and reactions …
Preparation of gallium of the special purity for semiconductors and optoelectronics
L Mochalov, A Logunov, V Vorotyntsev - Separation and Purification …, 2021 - Elsevier
This work is devoted to the development of a novel method of gallium purification especially
designed for the fabrication of semiconductors and optical materials of UV–Visible-Mid IR …
designed for the fabrication of semiconductors and optical materials of UV–Visible-Mid IR …
Monolithic green-sensitive photodetectors enabled by a ZnSnN 2/GaN nanorods/silicon double heterojunction
Single heterojunction-based photodetectors (PDs) have been regarded as attractive optical
devices due to their outstanding electrical and optical properties (carrier density, operation …
devices due to their outstanding electrical and optical properties (carrier density, operation …
First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory
JH Hur - Scientific Reports, 2020 - nature.com
Unlike experimental measurements that appeared to be quite large activation barriers,
oxygen vacancies in zirconia-based resistive random access memory (ReRAM) are …
oxygen vacancies in zirconia-based resistive random access memory (ReRAM) are …
CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures
Heterostructures (HS) have always been in attraction due to their inherited properties and
different important applications. Integration of a phase-change material (PCM) with HS can …
different important applications. Integration of a phase-change material (PCM) with HS can …
[HTML][HTML] Performance analysis of indium phosphide channel based sub-10 nm double gate spin field effect transistor
In this paper, a novel double gate Spin-Field Effect Transistor (DG spin-FET) with indium
phosphide (InP) as channel material is evaluated. The proposed spin-FET device is well …
phosphide (InP) as channel material is evaluated. The proposed spin-FET device is well …
Broadband GaSb saturable absorber for pulse generation from C-band to mid-infrared
Material with nonlinear response to light intensity, ie, the saturable absorber, is an important
mean to realize pulsed lasers which have wide applications in many fields. In this paper, we …
mean to realize pulsed lasers which have wide applications in many fields. In this paper, we …