Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films

J Lyu, I Fina, R Solanas, J Fontcuberta… - Applied Physics …, 2018 - pubs.aip.org
Ferroelectric orthorhombic Hf 0.5 Zr 0.5 O 2 thin films have been stabilized epitaxially on La
2/3 Sr 1/3 MnO 3/SrTiO 3 (001) by pulsed laser deposition. The epitaxial orthorhombic …

[HTML][HTML] HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review

J Liao, S Dai, RC Peng, J Yang, B Zeng, M Liao… - Fundamental …, 2023 - Elsevier
The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently
required for novel non-volatile memory devices with low power consumption, fast read/write …

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of

Y Zhang, Q Yang, L Tao, EY Tsymbal, V Alexandrov - Physical Review Applied, 2020 - APS
The discovery of ferroelectric polarization in Hf O 2-based ultrathin films has spawned much
interest due to their potential applications in data storage. In 2018, an R 3 m rhombohedral …

Purely cubic spin splittings with persistent spin textures

HJ Zhao, H Nakamura, R Arras, C Paillard, P Chen… - Physical Review Letters, 2020 - APS
Purely cubic spin splittings in the band structure of bulk insulators have not been extensively
investigated yet despite the fact that they may pave the way for novel spin-orbitronic …