Spin–orbit coupling (SOC) links the spin degree of freedom to the orbital motion of electrons
in a solid and plays an important role in the emergence of new physical phenomena. In non …

The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently
required for novel non-volatile memory devices with low power consumption, fast read/write …

The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …

Persistent spin texture (PST) is the property of some materials to maintain a uniform spin
configuration in the momentum space. This property has been predicted to support an …

The HfO 2-based ferroelectrics have aroused considerable attention due to their potential
application in silicon process-compatible memory devices. However, the ferroelectricity …

Ferroelectric orthorhombic Hf 0.5 Zr 0.5 O 2 thin films have been stabilized epitaxially on La
2/3 Sr 1/3 MnO 3/SrTiO 3 (001) by pulsed laser deposition. The epitaxial orthorhombic …

Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the
material and for prototy** emerging devices. Ferroelectric Hf0. 5Zr0. 5O2 (111) films were …

Purely cubic spin splittings in the band structure of bulk insulators have not been extensively
investigated yet despite the fact that they may pave the way for novel spin-orbitronic …

The discovery of ferroelectric polarization in Hf O 2-based ultrathin films has spawned much
interest due to their potential applications in data storage. In 2018, an R 3 m rhombohedral …

HfO2-based ferroelectric film has shown great potential for the application of ferroelectric
memory due to its great advantages as compared to traditional ferroelectrics. However, the …