Comparative analysis of nanowire tunnel field effect transistor for biosensor applications
Nanowire based devices are most important candidate for future generation application. The
unique advantage of Nanowire as a channel material is one dimensional conduction, low …
unique advantage of Nanowire as a channel material is one dimensional conduction, low …
Design and analysis of dual source vertical tunnel field effect transistor for high performance
Abstract An optimally designed Dual Source Vertical Tunnel Field Effect Transistors is
proposed and investigated using technology computer aided design simulation. The vertical …
proposed and investigated using technology computer aided design simulation. The vertical …
Investigation of N+ SiGe juntionless vertical TFET with gate stack for gas sensing application
In this work, a novel N+ SiGe delta-doped gate stacked junctionless vertical tunnel field
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …
Nanosheet FET for Future Technology Scaling
Improvements in the VLSI industry have always been striving to justify the Moore's law by
implanting, twice count transistors from the existing one. This law has made a significant …
implanting, twice count transistors from the existing one. This law has made a significant …
Analytical and compact modeling analysis of a SiGe hetero-material vertical L-shaped TFET
This paper deals with the development of a novel 2-D analytical modeling of heterojunction
vertical L-shaped tunnel FET for characterisation of surface potential and drain current. The …
vertical L-shaped tunnel FET for characterisation of surface potential and drain current. The …
Investigation of ON current and subthreshold swing of an InSb/Si heterojunction stacked oxide double-gate TFET with graphene nanoribbon
This research intends to develop an analytical model for a heterojunction graphene
nanoribbon double-gate tunnel field-effect transistor with a stacked SiO 2/HfO 2 layer …
nanoribbon double-gate tunnel field-effect transistor with a stacked SiO 2/HfO 2 layer …
Insights into the design principles of JF-ED-VTFET for biosensing application
In this research article, we have designed a junction-free electrostatically doped vertical
tunnel field-effect transistor (JF-ED-VTEFT) for label-free biosensing applications. We …
tunnel field-effect transistor (JF-ED-VTEFT) for label-free biosensing applications. We …
Detection of biomolecules using charge-plasma based gate underlap dielectric modulated do**less TFET
Abstract In this Paper, Dielectric Modulated Do**less Double Gate Transistor (DM-
DLDGTFET) device is proposed for the free label detection of the charged and neutral …
DLDGTFET) device is proposed for the free label detection of the charged and neutral …
Design and investigation of SiGe heterojunction based charge plasma vertical TFET for biosensing application
This paper explores the Vertical tunnel FET with the introduced layer of SiGe within the
channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …
channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …
Analysis of ONOFIC technique using SiGe heterojunction double gate vertical TFET for low power applications
In this paper, a new technique ONOFIC is proposed and implemented for designing the
SiGe heterojunction 2D double gate Vertical t-shaped TFET as an inverter circuit for low …
SiGe heterojunction 2D double gate Vertical t-shaped TFET as an inverter circuit for low …