Silicon compound nanomaterials: Exploring emission mechanisms and photobiological applications
After the first visible photoluminescence (PL) from porous silicon (pSi), continuous efforts are
made to fabricate Si‐based compound nanomaterials embedded in matrices such as oxide …
made to fabricate Si‐based compound nanomaterials embedded in matrices such as oxide …
SiOCH thin films deposited by chemical vapor deposition: From low-κ to chemical and biochemical sensors
V Jousseaume, J El Sabahy, C Yeromonahos… - Microelectronic …, 2017 - Elsevier
Significant advances have been made in the realization of porous SiOCH by chemical vapor
deposition processes. In this paper, the different approaches developed to introduce …
deposition processes. In this paper, the different approaches developed to introduce …
Facile Fabrication of Transparent Hydrophobic Spectral Converting Thin Film of Cyclic Silica-Silane Structure
There is a growing demand for advanced coatings with remarkable physical properties such
as high transparency, water resistance, spectrum conversion, and dust repellence, which …
as high transparency, water resistance, spectrum conversion, and dust repellence, which …
[HTML][HTML] Effect of thermal annealing on the luminescent and structural properties of the SiOxCy thin films by organic catalytic chemical vapor deposition
Photoluminescent silicon oxycarbide (SiO x C y) thin films were deposited on n-type (100)
silicon substrates using the organic catalytic chemical vapor deposition (Osingle bondCat …
silicon substrates using the organic catalytic chemical vapor deposition (Osingle bondCat …
Luminescent silicon oxycarbide thin films obtained with monomethyl-silane by hot-wire chemical vapor deposition
The use of silicon-based materials can represent enormous advantages to develop
optoelectronic devices. The preparation of luminescent silicon oxycarbide thin films …
optoelectronic devices. The preparation of luminescent silicon oxycarbide thin films …
The influence of deposition time on the photoluminescent properties of SiOxCy thin films obtained by Cat-CVD from monomethyl silane precursor
In recent years, silicon-related photoluminescent materials have attracted great attention
due to their optical properties. This work aims to study the deposited silicon oxycarbide (SiO …
due to their optical properties. This work aims to study the deposited silicon oxycarbide (SiO …
Delayed luminescence induced by complex domains in water and in TEOS aqueous solutions
C Colleoni, S Esposito, R Grasso, M Gulino… - Physical Chemistry …, 2016 - pubs.rsc.org
Many recent studies on water have conjectured a complex structure composed of hydrogen
bonded low-and high-density domains. In this work the structure of pure water and aqueous …
bonded low-and high-density domains. In this work the structure of pure water and aqueous …
Properties of Erbium-Doped Silicon Oxycarbide Thin Films
I García, C Morales, E Rosendo, M Pérez… - ECS Journal of Solid …, 2023 - iopscience.iop.org
This research paper presents findings on the properties of erbium ions incorporated within
an amorphous silicon oxycarbide host matrix. A special analysis is made on …
an amorphous silicon oxycarbide host matrix. A special analysis is made on …
Facile construction of silica-based surface coating onto polypropylene microporous film through dopamine-assisted hydrolysis of tetraethoxysilane
Y Zhao, L Si, W Dang, Z Lu - Ceramics International, 2018 - Elsevier
Surface modification with silica-based coating is widely used to attain high performance and
construct special functions for thin films. In this paper, dopamine (DA) and tetraethoxysilane …
construct special functions for thin films. In this paper, dopamine (DA) and tetraethoxysilane …
Size distribution and visible luminescence of silicon nanoparticles embedded in SiNx thin film: Role of RF power in PECVD
This paper presents, the studies of the influence of (radio frequency) RF power on the size
distribution and visible photoluminescence (PL) of SiN x thin film deposited at 300∘ C of …
distribution and visible photoluminescence (PL) of SiN x thin film deposited at 300∘ C of …