Optically gated resonant emission of single quantum dots
We report on the resonant emission in coherently driven single semiconductor quantum
dots. We demonstrate that an ultraweak nonresonant laser acts as an optical gate for the …
dots. We demonstrate that an ultraweak nonresonant laser acts as an optical gate for the …
Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
We propose a novel methodology capable of separately evaluating the contribution of the
different recombination processes in quantum dot laser diodes (QD LDs) driven below …
different recombination processes in quantum dot laser diodes (QD LDs) driven below …
[LIBRO][B] Handbook of self assembled semiconductor nanostructures for novel devices in photonics and electronics
M Henini - 2011 - books.google.com
The self-assembled nanostructured materials described in this book offer a number of
advantages over conventional material technologies in a wide range of sectors. World …
advantages over conventional material technologies in a wide range of sectors. World …
Multiple time scale blinking in InAs quantum dot single-photon sources
We use photon correlation measurements to study blinking in single, epitaxially grown self-
assembled InAs quantum dots situated in circular Bragg grating and microdisk cavities. The …
assembled InAs quantum dots situated in circular Bragg grating and microdisk cavities. The …
Effects of the quantum dot ripening in high-coverage InAs∕ GaAs nanostructures
We report a detailed study of In As∕ Ga As quantum dot (QD) structures grown by molecular
beam epitaxy with InAs coverages θ continuously graded from 1.5 to 2.9 ML. The effect of …
beam epitaxy with InAs coverages θ continuously graded from 1.5 to 2.9 ML. The effect of …
Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell
Conceived to exceed the conversion efficiency of conventional photovoltaic devices, the
intermediate band solar cell bases its operation on exploiting, besides the usual band-to …
intermediate band solar cell bases its operation on exploiting, besides the usual band-to …
Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers
Deep levels in metamorphic InAs/In x Ga 1− x As quantum dot (QD) structures are studied
with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and …
with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and …
Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains
The in-plane photoconductivity and photoluminescence are investigated in quantum dot-
chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from …
chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from …
Deep levels in GaAs (001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices
Currently lattice mismatch strain-driven three-dimensional coherent island based quantum
dots, dubbed self-assembled quantum dots (SAQDs), constitute the most developed class of …
dots, dubbed self-assembled quantum dots (SAQDs), constitute the most developed class of …
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots
We present a detailed study of the dependence of the spectral characteristics of
quasiresonantly excited InAs/GaAs quantum dots on electronic structure, temperature, and …
quasiresonantly excited InAs/GaAs quantum dots on electronic structure, temperature, and …