We investigated edge configuration and quantum confinement effects on electron transport
in armchair-edged graphene nanoribbons (A-GNRs) by using a computational approach …

Full-quantum device simulations on p-type Si nanowire field-effect transistors based on the
k· p method, using the k· p parameters tuned against the sp 3 s* tight-binding method, are …

Transistor designs based on using mixed Γ-L valleys for electron transport are proposed to
overcome the density of states bottleneck while maintaining high injection velocities. Using a …

In this paper, we investigate the performance potentials of silicon nanowire (SNW) and
semiconducting graphene nanoribbon (GNR) MOSFETs by using first-principles …

Contact resistance strongly deteriorates the performance of devices based on 2-D materials
and their nanostructures, masking their exceptional electronic and transport properties. This …

Atomistic quantum transport simulations are employed to study the electron injection velocity
(v inj) and ballistic performance of phosphorene nanoribbon (PNR) field-effect transistors …

The performances of ultrascaled SiGe nanowire field-effect transistors (NWFETs) are
investigated using an atomistic tight-binding model and a virtual crystal approximation to …

A 20 band sp 3 d 5 s∗ spin-orbit-coupled, semiempirical, atomistic tight-binding model is
used with a semiclassical, ballistic field-effect-transistor model, to theoretically examine the …

Thermally activated subthreshold transport has been investigated in undoped triple-gate
MOSFETs. The evolution of the barrier height and of the active cross-sectional area of the …

The presence of interface states at the MOS interface is a well-known cause of device
degradation. This is particularly true for ultrascaled FinFET geometries where the presence …