A numerical study on comparing the active and passive cooling of AlGaN/GaN HEMTs
In this paper, the power density capability of AlGaN/GaN high-electron mobility transistors
(HEMTs) made on Si, SiC, and diamond substrates were compared with devices on Si and …
(HEMTs) made on Si, SiC, and diamond substrates were compared with devices on Si and …
Effects of self-heating on performance degradation in AlGaN/GaN-based devices
A self-consistent electrothermal transport model that couples electrical and thermal transport
equations is established and applied to AlGaN/GaN device structures grown on the …
equations is established and applied to AlGaN/GaN device structures grown on the …
The effects of gate-connected field plates on hotspot temperatures of AlGaN/GaN HEMTs
To increase the reliability and the maximum performance of AlGaN/GaN high electron
mobility transistors (HEMTs), gate field plates are frequently used with surface passivation …
mobility transistors (HEMTs), gate field plates are frequently used with surface passivation …
Characterization of the nonlinear thermal resistance and pulsed thermal dynamic behavior of AlGaN–GaN HEMTs on SiC
A laboratory setup, along with a set of measurement and identification procedures, have
been developed expressly for the characterization of the thermal behavior of AlGaN/GaN …
been developed expressly for the characterization of the thermal behavior of AlGaN/GaN …
Hybrid electrothermal simulations of GaN HEMT devices based on self-heating free virtual electrical characteristics
The electrothermal behavior of gallium nitride (GaN) HEMTs has been simulated by using a
hybrid approach in which the problem is solved by coupling together an effective model (for …
hybrid approach in which the problem is solved by coupling together an effective model (for …
Scalable modeling of transient self-heating of GaN high-electron-mobility transistors based on experimental measurements
This paper details an extraction procedure to fully model the transient self-heating of
transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry …
transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry …
GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project
The present paper presents the transistor modeling work achieved in the GaN European
project KorriGaN (“Key Organisation for Research in Integrated Circuits in GaN technology”) …
project KorriGaN (“Key Organisation for Research in Integrated Circuits in GaN technology”) …
Analysis of the thermal behavior of AlGaN/GaN HEMTs
S Russo, V d'Alessandro, M Costagliola… - Materials Science and …, 2012 - Elsevier
The thermal behavior of state-of-the-art multifinger AlGaN/GaN HEMTs grown on SiC is
thoroughly analyzed under steady-state and dynamic conditions. Accurate 3-D FEM …
thoroughly analyzed under steady-state and dynamic conditions. Accurate 3-D FEM …
Improvements from SiC substrate thinning in AlGaN/GaN HEMTs: disparate effects on contacts, access and channel regions
B Parvez, J Jha, P Upadhyay… - IEEE Electron …, 2021 - ieeexplore.ieee.org
We report the positive effects of SiC substrate thinning on the DC and RF performance of
AlGaN/GaN high electron mobility transistors (HEMTs). The substrate is thinned down from …
AlGaN/GaN high electron mobility transistors (HEMTs). The substrate is thinned down from …
Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT
In this paper, we have investigated the channel temperature and thermal sensitivity for a
0.15 μm gate GaN HEMT at nine different temperatures from 233 K to 423 K. The estimation …
0.15 μm gate GaN HEMT at nine different temperatures from 233 K to 423 K. The estimation …