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The future transistors
The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …
Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications
Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-
steep logical switching and low power non-volatile memory functions, have significant …
steep logical switching and low power non-volatile memory functions, have significant …
Is negative capacitance FET a steep-slope logic switch?
The negative-capacitance field-effect transistor (NC-FET) has attracted tremendous research
efforts. However, the lack of a clear physical picture and design rule for this device has led to …
efforts. However, the lack of a clear physical picture and design rule for this device has led to …
Sub-thermionic, ultra-high-gain organic transistors and circuits
Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer
Significant effort for demonstrating a gallium nitride (GaN)-based ferroelectric metal–oxide–
semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation …
semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation …
Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric
In this study, we demonstrate ferroelectric GaN high-electron mobility transistors (HEMTs)
with a sputtered AlScN gate dielectric, exhibiting a large memory window of~ 14.6 V and a …
with a sputtered AlScN gate dielectric, exhibiting a large memory window of~ 14.6 V and a …
Lattice Defect Engineering Enables Performance-Enhanced MoS2 Photodetection through a Paraelectric BaTiO3 Dielectric
Carrier mobility and density are intrinsically important in nanophoto/electronic devices. High-
dielectric-constant coupled polarization-field gate ferroelectrics are frequently studied and …
dielectric-constant coupled polarization-field gate ferroelectrics are frequently studied and …
Recent advances in negative capacitance FinFETs for low-power applications: a review
In the contemporary era of Internet-of-Things (IoT), there is an extensive search for
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer
The negative capacitance operation of a ferroelectric material is not only an intriguing
materials science topic, but also a property with important technological applications in …
materials science topic, but also a property with important technological applications in …