La-doped alumina, lanthanum aluminate, lanthanum hexaaluminate, and related compounds: a review covering synthesis, structure, and practical importance
J Heveling - Industrial & Engineering Chemistry Research, 2023 - ACS Publications
Advanced materials based on lanthanum–aluminum oxides are useful for many practical
applications, not the least in catalysis, energy conversion and energy storage systems …
applications, not the least in catalysis, energy conversion and energy storage systems …
A new technique based on current measurement for nanoscale ferroelectricity assessment: Nano-positive up negative down
S Martin, N Baboux, D Albertini… - Review of Scientific …, 2017 - pubs.aip.org
In this paper, we propose a new procedure which aims at measuring the polarisation
switching current at the nanoscale on ferroelectric thin films with the atomic force microscope …
switching current at the nanoscale on ferroelectric thin films with the atomic force microscope …
Electromechanical response of amorphous LaAlO3 thin film probed by scanning probe microscopies
AS Borowiak, N Baboux, D Albertini, B Vilquin… - Applied Physics …, 2014 - pubs.aip.org
The electromechanical response of a 3 nm thick amorphous LaAlO 3 layer obtained by
molecular beam epitaxy has been studied using scanning probe microscopies. Although this …
molecular beam epitaxy has been studied using scanning probe microscopies. Although this …
Fabrication of ultra-flat silver surfaces with sub-micro-meter scale grains
Most fabrication methods for obtaining metal films rely on direct deposition techniques and
usually yield surfaces with small grains and a significant surface roughness. In contrast …
usually yield surfaces with small grains and a significant surface roughness. In contrast …
Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
X Wang, HX Liu, CX Fei, SY Yin, XJ Fan - Nanoscale Research Letters, 2015 - Springer
In this study, the physical and electrical characteristics of Al 2 O 3/La 2 O 3/Al 2 O 3/Si stack
structures affected by the thickness of an Al 2 O 3 barrier layer between Si substrate and La …
structures affected by the thickness of an Al 2 O 3 barrier layer between Si substrate and La …
First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO3 (001) and (110) (1 × 1) Polar Terminations
H Chen, Y Ding, H Yu, Y **e - The Journal of Physical Chemistry …, 2015 - ACS Publications
The first-principles thermodynamics characterization of the stabilities and electronic
properties of the LaAlO3 (001) and (110) polar surfaces was systematically performed using …
properties of the LaAlO3 (001) and (110) polar surfaces was systematically performed using …
Nanoscale dielectric properties of TiO2 in SiO2 nanocomposite deposited by hybrid PECVD method
In this paper, nanocomposites (TiO 2 in SiO 2) are produced by an advanced hybrid aerosol-
PECVD method based on direct liquid injection of a non-commercial colloidal solution in an …
PECVD method based on direct liquid injection of a non-commercial colloidal solution in an …
The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD
XY Feng, HX Liu, X Wang, L Zhao, CX Fei… - Nanoscale Research …, 2017 - Springer
The capacitance and leakage current properties of multilayer La 2 O 3/Al 2 O 3 dielectric
stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of …
stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of …
Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures
XY Feng, HX Liu, X Wang, L Zhao, CX Fei… - Nanoscale Research …, 2016 - Springer
The mechanism of flat band voltage (V FB) shift for alternate La 2 O 3/Al 2 O 3 multilayer
stack structures in different annealing condition is investigated. The samples were prepared …
stack structures in different annealing condition is investigated. The samples were prepared …
Improvements on the Interfacial Properties of High-k/Ge MIS Structures by Inserting a La2O3 Passivation Layer
L Zhao, H Liu, X Wang, Y Wang, S Wang - Materials, 2018 - mdpi.com
In this paper, the impact of La2O3 passivation layers on the interfacial properties of Ge-
based metal-insulator-semiconductor (MIS) structures was investigated. It was proven that …
based metal-insulator-semiconductor (MIS) structures was investigated. It was proven that …