The present report deals with the main aspects of the interaction of hydrogen with the
atomically clean crystalline silicon surfaces and submonolayer metal/silicon interfaces. After …

We review recent theoretical work on current-triggered processes in molecular-scale
devices—a field at the interface between solid state physics and chemical dynamics with …

The quest to build a quantum computer has been inspired by the recognition of the
formidable computational power such a device could offer. In particular silicon-based …

Integrated circuits and certain silicon-based quantum devices require the precise positioning
of dopant nanostructures, and hydrogen resist lithography can be used to fabricate such …

We report STM-induced desorption of H from Si 100− H 2× 1 at negative sample bias. The
desorption rate exhibits a power-law dependence on current and a maximum desorption …

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with
lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These …

We discuss the influence of temperature on local bond breaking through multiple vibrational
excitations induced by inelastic tunneling in the STM. We focus on hydrogen desorption from …

The ultrahigh vacuum (UHV) scanning tunneling microscope (STM) enables patterning and
characterization of the physical, chemical, and electronic properties of nanostructures on …

Low energy electrons may provide mechanisms to enhance thin film growth at low
temperatures. As a proof of concept, this work demonstrated the deposition of gallium nitride …

Silicon thin films were deposited at room temperature with electron-enhanced atomic layer
deposition (EE-ALD) using sequential exposures of disilane (Si 2 H 6) and electrons. EE …