Electromigration failure is a major reliability concern for integrated circuits. The continuous
shrinking of metal line dimensions together with the interconnect structure arranged in many …

Resistance increase due to electromigration induced depletion under TSV Page 1 Resistance
increase due to electromigration induced depletion under TSV T. Frank1,3, C. Chappaz1, P …

Electromigration (EM) is re-emerging as a significant problem in modern integrated circuits
(IC). Especially in power grids, due to shrinking wire widths and increasing current densities …

We perform a detailed assessment of the electromigration performance of Co interconnects.
Package level EM measurements were performed during> 11 months. Our estimate of the …

The Network-on-Chip (NoC) paradigm has emerged as an enabler for integrating a large
number of embedded cores in a single die. Three-dimensional (3D) integration, a …

Electromigration induced failure development in a copper dual-damascene structure with a
through silicon via (TSV) located at the cathode end of the line is studied. The resistance …

A compact model for early electromigration failures in copper dual-damascene interconnects
is proposed. The model is based on the combination of a complete void nucleation model …

Safety-critical systems have to follow extremely high dependability requirements as
specified in the standards for automotive, air, and space applications. The required high fault …

3D Network-on-Chip (3D NoC) enables design of high-performance and energy-efficient
manycore computing platforms. Two of the commonly used vertical interconnection …

Workload-Aware Periodic Interconnect BIST Page 1 Workload-Aware Periodic Interconnect
BIST Somayeh Sadeghi-Kohan1, Sybille Hellebrand1, Hans-Joachim Wunderlich2 …