[HTML][HTML] Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
GaN FinFETs and trigate devices for power and RF applications: Review and perspective
Y Zhang, A Zubair, Z Liu, M ** in silicon carbide and gallium nitride electronic devices
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …
excellent materials for the next generation of high-power and high-frequency electronic …
Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process
We present a vertical GaN planar metal-oxide-semiconductor field-effect transistor
(MOSFET) fabricated by an all ion implantation process. The fabricated MOSFET shows an …
(MOSFET) fabricated by an all ion implantation process. The fabricated MOSFET shows an …