We perform a detailed comparison of 2D Auger coefficients in narrow-gap type-I and type-II
quantum wells (T1QWs and T2QWs), and the relative effects of Auger non-radiative decay …

Solution-processed PbS quantum dot light-emitting diodes (QLEDs) with emission in the
second near-infrared window (NIR-II, 1100–1700 nm) are excellent candidates as light …

This chapter reviews the fundamental physics and associated limitations of semiconductor
lasers operating across the mid-infrared (MIR) range of 2–20 μm. Using a combination of …

We report two tunable diode laser configurations emitting around 2.6 μm, where the gain is
provided by a high-gain GaSb-based reflective semiconductor optical amplifier. The lasers …

In this paper, we discuss how the deliberate and controlled introduction of strain can be
used to improve the performance of semiconductor lasers. We show how strain-induced …

An InGaAlAs/InP membrane external-cavity surface-emitting laser (MECSEL) operating at
1770 nm is reported for the first time. A record high power of 7.7 W is registered at-20° C …

We report the development of superluminescent diodes (SLDs) emitting mW-level output
power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure …

We report on the growth and lasing characteristics of 2.3%-compressive-strained InGaAsSb
multiple-quantum-well (MQW) lasers on InP substrates with emission wavelengths near 2.2 …

From a systematic study of the threshold current density as a function of temperature and
hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold …

We present a theoretical analysis and optimisation of the properties and performance of mid-
infrared semiconductor lasers based on the dilute bismide alloy In x Ga 1− x As 1− y Bi y …