III-V compound semiconductors (SC) have played a crucial role in the development of
optoelectronic devices for a broad range of applications. Major applications of InP or GaAs …

▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

This important book focuses on the synthesis and fabrication of nanostructures and
nanomaterials, but also includes properties and applications of nanostructures and …

Results: Broad area lasers with 100µm stripe widths were fabricated from this structure. The
wafer was then cleaved into 7.8 mm long laser bars. All devices were tested with the n-side …

Amplified spontaneous emission measurements are investigated below threshold in InAs
quantum-dot lasers emitting at 1.22 μm. The dot layer of the laser was grown in a strained …

Lasers continue to be an amazingly robust field of activity. Anyone seeking a photon source
is now confronted with an enormous number of possible lasers and laser wavelengths to …

The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP
(001) substrates are reported. Pulsed room-temperature operation demonstrates …

We review the present status of the rapidly develo** field of semiconductor laser diodes
based on self-organized quantum dots (QDs). Several milestones have been achieved since …

Strain-driven decomposition of an alloy layer is investigated as a means to control the
structural and electronic properties of self-organized quantum dots. Coherent InAs/GaAs …

Passive mode locking was achieved at 1.3 μm in oxide-confined, two-section, bistable
quantum dot (QD) lasers with an integrated intracavity QD saturable absorber. Fully mode …