Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Low-frequency noise characteristics of recessed channel ferroelectric field-effect transistors
This study investigates low-frequency noise (LFN) and random telegraph noise (RTN)
characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with …
characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with …
Tunable Ferroelectric Properties of HfO-Based Oxides: Role of Aluminum Do** and Bottom Electrodes
We investigate the impact of Al concentrations and different bottom electrodes on the
crystallinity, ferroelectricity, energy storage density (ESD), and oxygen defects in Hf Zr O …
crystallinity, ferroelectricity, energy storage density (ESD), and oxygen defects in Hf Zr O …
Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered HfZrO
In this letter, we investigated the ferroelectric characteristics of Hf0. 5Zr0. 5O2 (HZO)
deposited by radio frequency (RF) sputtering at various deposition powers and the impact of …
deposited by radio frequency (RF) sputtering at various deposition powers and the impact of …
Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications
This study proposed a novel approach to enhance the retention characteristics in dynamic
random access memory (DRAM) by employing a unique local polarization method …
random access memory (DRAM) by employing a unique local polarization method …
Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor
This study introduces a ferroelectric tunnel field-effect transistor (Fe-TFET) capable of
implementing three types of signal processing for frequency doubler, phase shifter, and …
implementing three types of signal processing for frequency doubler, phase shifter, and …
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor
(FeFET). To analyze the operation characteristics, we employed the technology computer …
(FeFET). To analyze the operation characteristics, we employed the technology computer …
Simulation of a Recessed Channel Ferroelectric-Gate Field-Effect Transistor with a Dual Ferroelectric Gate Stack for Memory Application
S Chen, DH Ahn, SU An, Y Kim - 2023 7th IEEE Electron …, 2023 - ieeexplore.ieee.org
Over the years, there has been much research on ferroelectric field-effect transistors
(FeFETs) for memory applications. In this work, we propose a novel recessed channel …
(FeFETs) for memory applications. In this work, we propose a novel recessed channel …
TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications
In this study, we propose a ferroelectric FET (FeFET) structure termed dual ferroelectric
recessed channel FeFET (DF-RFeFET), employing metal–ferroelectric (FE)–metal–FE …
recessed channel FeFET (DF-RFeFET), employing metal–ferroelectric (FE)–metal–FE …
High-K dual metal gate-nano tube (DMG-NT) field effect transistors (FETs): A possible solution to diminish the effect of temperature variation
V Purwar - International Journal of Nano Dimension, 2024 - oiccpress.com
This paper provides a possible solution to minimize the effect of temperature on nano-tube
(NT) FETs by applying performance enhancers. Here high-k and dual metal gates (DMG) …
(NT) FETs by applying performance enhancers. Here high-k and dual metal gates (DMG) …