[HTML][HTML] Li7La3Zr2O12 interface functionalization via boric acid treatment: A step to contact improvement
I Cuevas, F Nkosi, K Edström, M Valvo - Applied Surface Science, 2024 - Elsevier
Realization of a functional surface layer of lithium metaborate at the interface of garnet-type
lithium lanthanum zirconium oxide (LLZO) electrolyte pellets is achieved via a mild, scalable …
lithium lanthanum zirconium oxide (LLZO) electrolyte pellets is achieved via a mild, scalable …
Electronic properties of composite iron (II, III) oxide (Fe3O4) carbonaceous absorber materials by electron spectroscopy
Electronic properties of composite Fe 3 O 4 carbonaceous absorber materials were obtained
by using X-ray photoelectron spectroscopy (XPS), reflection electron energy loss …
by using X-ray photoelectron spectroscopy (XPS), reflection electron energy loss …
Electronic and optical properties of Al2O3/SiO2 thin films grown on Si substrate
D Tahir, HL Kwon, HC Shin, SK Oh… - Journal of Physics D …, 2010 - iopscience.iop.org
The electronic and optical properties of Al 2 O 3/SiO 2 dielectric thin films grown on Si (1 0 0)
by the atomic layer deposition method were studied by means of x-ray photoelectron …
by the atomic layer deposition method were studied by means of x-ray photoelectron …
Modification in electronic, structural, and magnetic properties based on composition of composites Copper (II) Oxide (CuO) and Carbonaceous material
Modification in electronic properties of composite copper (II) oxide (CuO) and activated
carbon (AC) were obtained by using x-ray photoelectron spectroscopy (XPS), reflection …
carbon (AC) were obtained by using x-ray photoelectron spectroscopy (XPS), reflection …
Evaluation of antimicrobial properties of a novel synthesized nanometric delafossite
Antibiotics and other antimicrobial compounds are the backbone of clinical medicine.
Antimicrobial resistance can cause serious diseases to man. Nanotechnology can improve …
Antimicrobial resistance can cause serious diseases to man. Nanotechnology can improve …
Reflection electron energy loss spectroscopy for ultrathin gate oxide materials
The band alignment of HfZrO4 gate oxide thin films on Si (100) deposited by the atomic layer
deposition method has been investigated using reflection electron energy loss spectroscopy …
deposition method has been investigated using reflection electron energy loss spectroscopy …
Composition dependence of dielectric and optical properties of Hf-Zr-silicate thin films grown on Si (100) by atomic layer deposition
Composition dependence of the dielectric and optical properties of (HfZrO 4)(1− x)(SiO
2)(x)(0≤ x≤ 0.2) gate dielectric thin films, grown on Si (100) by the atomic layer deposition …
2)(x)(0≤ x≤ 0.2) gate dielectric thin films, grown on Si (100) by the atomic layer deposition …
Density functional modeling of structural and electronic properties of amorphous high temperature oxides
VB Sulimov, DC Kutov, AV Sulimov, FV Grigoriev… - Journal of Non …, 2022 - Elsevier
Ab initio molecular dynamics modeling in the NPT ensemble is used to obtain amorphous
states by melting SiO 2, ZrO 2 and HfO 2 crystals. A wide range of melt stabilization …
states by melting SiO 2, ZrO 2 and HfO 2 crystals. A wide range of melt stabilization …
Effect of growth temperature on structural and electronic properties of ZnO thin films
D Tahir, KH Jae - AIP Conference Proceedings, 2017 - pubs.aip.org
The electronic and structural properties for RF magnetron sputtering deposited ZnO thin
films grown on Si substrate was obtained by using X-ray diffraction (XRD) and reflection …
films grown on Si substrate was obtained by using X-ray diffraction (XRD) and reflection …
Band alignment of atomic layer deposited (HfZrO4) 1− x (SiO2) x gate dielectrics on Si (100)
The band alignment of atomic layer deposited (HfZrO 4) 1− x (SiO 2) x (x= 0, 0.10, 0.15, and
0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron …
0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron …